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Samsung revealed on July 16 that it has successfully developed the first 10-nanometer nanoscale 8-Gigabit (Low-Power, Double-Data-Rate) nanoscale DRAM (Dynamic Random Access Memory). This represents a quantum leap for the 5G connectivity segment and marks a leap forward in ARM and Qualcomm's 5G chips.
Since the introduction of the first 8Gb LPDDR4 in mbad production in 2014, Samsung has indicated that it is preparing the transition to the LPDDR5 The new 8 Gb LPDDR5 is the latest in the DRAM range Premium Samsung, which includes a 10 Gbit / s GDDR6 DRAM of 10 nm (in volume since December). 2017) and DRAM DDR5 16Gb (developed in February).
"This development of 8Gb LPDDR5 represents a major breakthrough for low-power mobile memory solutions," Jinman Han, vice president of memory product planning and application at Samsung, said in a review to the media. "We will continue to expand our next-generation 10nm DRAM family as we accelerate the move toward greater utilization of premium memory in the global landscape."
High data transfer rate
LPDDR5 claims a data rate of up to 6400 megabits per second (Mb / s), which Samsung claims to be 1.5 times more faster than the mobile DRAM chips used in today's flagship mobile devices (LPDDR4X, 4266Mb / s). With the increase of the transfer rate, the new LPDDR5 can send 51.2 GB of data, or about 14 full-HD video files (3.7 GB each), in one second
DRAM LPDDR5 10nm- clbad will be available in two bandwidths – 6,400Mb / s at an operating voltage of 1,1 and 5,500Mb / s at 1,05V – making it a versatile mobile memory for smartphones and new generation automotive systems.
Samsung said that this performance improvement was possible thanks to several architectural improvements. By doubling the number of "banks" of memory – subdivisions in a DRAM cell – from eight to 16, the new memory can reach a much higher speed while reducing power consumption. The LPDDR5 8Gb also uses a very advanced, high-speed circuit architecture that verifies and guarantees the ultra-high speed performance of the chip, the company said.
Decreases the voltage according to the speed of the processor [19659002] In order to maximize energy savings, the 10nm LPDDR5 was designed to lower its voltage according to the operating speed of the processor. corresponding application, in active mode.
More Technical Information: The new chip has also been configured to avoid overwriting cells with "0" values. In addition, the new LPDDR5 chip will offer a "deep sleep mode", which reduces power consumption to about half of the "inactive mode" of the current LPDDR4X DRAM. With these low-power features, the 8Gb LPDDR5 DRAM should deliver power consumption reductions of up to 30%, maximizing mobile device performance and extending battery life. smartphones.
LPDDR5 Samsung said:
Samsung, together with the world's leading chip vendors, has completed the functional testing and validation of a prototype 8GB DRAM LPDDR5 memory, which includes eight 8GB LPDDR5 fleas. Samsung has announced that it plans to immediately begin mbad production of its new generations of DRAMs (LPDDR5, DDR5 and GDDR6) and according to the demands of customers around the world.
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