The march of progress never stops. Just a few years ago, phones offered 128GB of internal storage, and your next smartphone might have a lot more space. Samsung today announced the launch of mass production of its ultra-fast 512GB eUFS 3.0 flash memory modules for use in phones and other portable electronic devices.
Samsung's new eUFS 3.0 flash memory technology is twice as fast as the previous generation, offering sequential read speeds of up to 2100 MB / s and sequential write speeds of up to 410 MB. s. For context, the playback speed is close to that of a NVMe PC SSD (like the Samsung 970 Evo), while the write speeds are similar to those of SATA-based SSDs (as the Crucial MX500).
Samsung will launch this month modules of 128 GB and 512 GB. The versions of 1 TB and 256 GB will be launched in the second half of 2019.
Based on the company's fifth-generation V-NAND, the new memory meets the latest specifications of the universal flash storage sector at a speed 20 times faster than a conventional microSD card.
Samsung Electronics, the world leader in advanced memory technologies, today announced that it has begun mass-producing the world's first 512-gigabyte (GB) Universal Storage Storage (eUFS) storage for next-generation mobile devices. According to the latest eUFS 3.0 specification, the new Samsung memory offers twice the speed of previous eUFS (eUFS 2.1) storage, enabling mobile memory to support seamless user experiences in future smartphones with ultra-high resolution screens.
"The launch of mass production of our eUFS 3.0 family gives us a significant advantage in the next-generation mobile phone market, where we are delivering a memory speed that was previously available only on ultra-portable notebooks. -minces, "said Cheol Choi, executive vice president of Sales and Memory Marketing at Samsung Electronics. "As we expand our eUFS 3.0 offerings, including a 1 terabyte (TB) version later this year, we hope to play a major role in accelerating the movement in the high-end mobile market.
Samsung produced the industry's first UFS interface with eUFS 2.0 in January 2015, 1.4 times faster than the mobile memory standard at the time, called the integrated multimedia card (eMMC) 5.1. In just four years, the company's latest eUFS 3.0 is up to the performance of today's ultra-thin laptops.
Samsung's 512 GB eUFS 3.0 technology stacks eight of the company's fifth-generation 512 gigabit (GB) V-NANDs and features a high-performance controller. At 2,100 megabytes per second (MB / s), the new eUFS doubles the sequential reading rate of the latest Samsung eUFS (eUFS 2.1), announced in January. The playback speed of the new solution is four times faster than that of a SATA Solid State Drive (SSD) and 20 times faster than a conventional microSD card, allowing premium smartphones to transfer a Full HD movie to a PC in about three seconds *. In addition, the sequential write speed has also been improved by 50%, reaching 410 MB / s, which equates to that of a SATA SSD.
The random read and write speeds of the new memory offer an increase of up to 36% over the current eUFS 2.1 sector specification, with 63,000 and 68,000 input / output operations per second respectively ( IOPS). With significant gains in random reads and writes that are more than 630 times faster than conventional microSD cards (100 IOPS), multiple complex applications can be run simultaneously while providing improved responsiveness, especially on the latest generation of 39, mobile devices.
After the release of the 512GB eUFS 3.0 and the 128GB version launched this month, Samsung plans to produce 1TB and 256GB models in the second half of the year, to further assist global device manufacturers to offer the innovations of tomorrow in mobile telephony.