Samsung manufactures some of the fastest storage systems in the world, not just phones. And the company announced today that it had begun mass-producing a 512-GB mobile-based flash memory with twice the read speed and 1.5 write speed. times higher than the previous leader, the 1 TB module announced last month at CES.
V-NAND (PDF) memory is based on its embedded Universal Flash Storage (eUFS) 3.0 specification: 1 TB is eUFS 2.1. According to Samsung, the 512 GB memory can reach read speeds of up to 2100 megabytes per second, compared to 1000 MB / s in 1 TB flash; Sequential write can reach 410 MB / s against 260 MB / s. The eUFS 3.0 1 TB memory is expected to arrive in the second half of 2019.
Given the timing, it is unlikely that the just shippedmodels will incorporate faster memory but the 512 GB will be available at the end of April, which means that the module is likely to be used – especially since Samsung is .
This is not just good news for Samsung phones. EUFS memory is also used in micro SD cards to expand storage in phones with card slots.