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Samsung will begin serial production of DDR4 memory with a manufacturing accuracy of 10nm in the second half of this year, with the entry of 8GB of 1M DRAM.
Samsung recently announced the development of 8Gb 1Z-nm 8Gb DDR4 memory, which will begin serial production in the second half of 2019 to support the next generation of high-end PCs and servers to be launched in 2020.
Samsung is about to place a 1-nm DRAM core memory for the next generation of DRAM interfaces, including DDR5, LPDDR5, and GDDR6.
The Korean giant also points out that the company is eager to keep pace with the needs of the market. It therefore plans to increase the production of DRAM required on a large market in the world.
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Here are the details of technological news: Samsung confirms the development of the third generation of DDR4 memory at 10 nm for today, we hope to have provided you with all the details and all the information and to follow all our news you can subscribe to system alerts or any of our different systems to provide you with all the latest news.
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