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Samsung has unveiled its latest generation of DDR5 random access memory, which is expected to open wide horizons in the world of advanced computers.
The most characteristic of the new memory is its capacity of 512 GB, which means that each chip will offer enormous capacities for processing data in computers without occupying large spaces, as is the case with random access memories. current.
And according to Samsung experts, the new DDR5 memory they have developed adopts High-K Metal Gate technology, in which metal conductors are used instead of silicon, which enables high-speed data transfer.
The information available indicates that these memories have a data transfer speed of 7200MB / s, which is almost twice the speed found in DDR4 memory.
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Thanks to the advanced technologies obtained by these memories, their energy consumption is 13% lower compared to the last RAM available for computers.
It is assumed that these segments will find wide uses in the world of advanced computers which depend on artificial intelligence techniques and process large amounts of data at the same time, and it is also supposed to be showcased with the next generation of computers that Samsung , Asus and HP will be launched next year.
Source: ixbit
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