Samsung announced the fifth generation of V-NAND flash memory

Samsung is on the list of leading memory manufacturers for some time so the company announced the beginning of V-NAND chips of the next generation

This is the fifth generation of this product, and the key option in the new variant is The implementation of NAND interface DDR 4.0 allowing for a 40% data transfer faster between the warehouse and RAM compared to previous variants, and reaching a maximum of 1.4 Gbps. In addition to better performance, new memory also brings improved efficiency when energy consumption is concerned

The fifth generation of V-NAND chips recalls the previous one, only instead of 64 has 90 layers of CTF cells ] organized in a pyramidal structure with microscopic openings in the middle, measuring only several hundred nanometers in width, and serving as channels with more than 85 billion CTF cells and storing up to 45 billion CTF cells. to three bits of data [Thenewgenerationalsobringssignificantimprovements in the data input speed and 30% compared to the previous generation, while the response of the read signal is reduced by 50μs.