When Samsung unveiled the Galaxy Fold last week, the company confirmed that the phone would be launched with 512 GB of eUFS 3.0 storage, which may mean nothing to you immediately. It has not even detailed its new eUFS 3.0 technology on stage, but it is the new generation storage standard that is expected to dramatically increase storage transfer speeds on mobile devices. At one point, during the deluge of rumors and leaks about the Galaxy S10, we learned that the phone would come with the integrated eUFS 3.0 storage, but that did not happen. Instead, Galaxy S10 handsets come with up to 1TB of eUFS 2.1 flash memory. It's still a fast, but not as fast storage as the Galaxy Fold offers: the foldable phone only takes three seconds to transfer a 3.7GB Full HD movie, four times faster than most SSDs for laptops.
Samsung announced Tuesday that it was ready to mass-produce 512GB eUFS 3.0 storage modules based on the company's fifth-generation V-NAND technology. Versions of 1TB will follow in the second half, making Galaxy Note 10 a candidate candidate for the new eUFS 3.0 flash chip.
Samsung claims that its 512GB eUFS 3.0 memory stacks eight 512GB V-NAND arrays and a high-performance controller. This means for end users that not only will files be transferred almost instantly, but that the speed of devices using these chips should increase dramatically.
The 1 TB eUFS 2.1 included in the Galaxy S10 + achieves sequential read and write speeds of 1000 MB / s and 260 MB / s, while random read and write speeds are 58,000 IOPS and 50,000 IOPS. Now let's look at the same numbers for the 512GB eUFS 3.0 storage in the Galaxy Fold: 2,100 MB / s, 410 MB / s, 63,000 IOPS and 68,000 IOPS. This is a significant improvement over eUFS 2.1 which should not go unnoticed. In its press release, Samsung reported that the reading speed of the eUFS 3.0 flash is four times that of the SATA SSD and 20 times that of conventional microSD cards, while the writing speed is equivalent to that of the SSDs. .
That said, the SD Association unveiled at the beginning of the week a new standard for microSD cards, which would place them in the eUFS 2.1 reading speed range.
Samsung would not say which other devices will benefit from this massive upgrade in storage speed, but it is likely that all future Galaxy smartphones will feature eUFS 3.0 flash memory. At first, Samsung will manufacture chips of 128 GB and 512 GB, with modules of 256 GB and 1 TB coming in the second half.