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Samsung will first try a 1 terabyte storage barrier built into smartphones in 2019
While Apple and Google are embarking on the distribution of cloud storage services for your mobile devices, Samsung has already developed a new generation flash drive. The South Korean manufacturer has announced the release of the fifth-generation V-NAND, delivered with 1TB eUFS chips.
The new chip has the same dimensions as the latest generation 512GB reader – 11.5 x 13 mm. The new module is composed of 16 layers of V-NAND 5 gigabits, and the latest controller, according to Samsung, will offer the best performance in the field of mobile storage.
The first generation universal flash storage chips appeared 4 years ago in a volume of 128 GB. Although at that time they were relatively fast, the speed of reading and writing more than doubled. Samsung's memory modules were very fast at the time, but at the release of the fifth generation, the speed of reading and writing of the V-NAND had doubled.
Samsung reports that the serial read speed can reach 1000 MB / s. twice the size of a standard 2.5-inch SATA SSD and the serial recording rate now reaches 260 MB / s. The 1 TB random read was 38% faster compared to the old fourth-generation processor chip 512 GB
In practice, such speeds will allow to the next smartphone Samsung Galaxy S10, for example to record videos at 960 frames per second without delay, or save about 100 hours of video in 4K resolution
Doctors found that Ukrainians had massively slammed on computers and smartphones:
Recall that all the secrets of the iPhone XI (2019) had been revealed. And recently, Samsung has revealed the release date of the future smartphone with a folding screen.
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