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"Supercomputer Leader in High Capacity"
Samsung Electronics has announced the launch of the 5th generation V-NAND flash, the world's first mbad production. Samsung Electronics has announced the 10th that it will mbad-produce the 5th generation 256Gb (V) NAND flash with a data transfer rate 1.4 times faster than with the 4th generation NAND V flash.
The NAND flash is a type of semiconductor memory, unlike the DRAM memory, which has the characteristic that the stored information is not erased even when the power is off.
For the first time in the 5th generation V NAND, the NAND interface <Toggle DDR 4.0 specification & # 39; of the new generation was applied for the first time. The interface is 1400 Mpbs (megabits per second), which is 1.4 times faster than the Toggle DDR 3.0 specification, which is applied to the 4th generation V-NAND.
This product contains 90 cells or more After vertical stacking, hundreds of nanometers (nanometers, 1 nanometer or 1 billionth of a meter) of fine holes have been drilled from top to bottom. That's more than 85 billion CTF 3-D (Charge Trap Flash) cells. For the first time in the industry, Samsung has developed a way to stack cells vertically rather than flat.
Productivity has also increased by more than 30% compared to the fourth generation V NAND. There is a problem when the number of stages is increased, the whole structure is deformed or there is a difference in the characteristics between the cells of the highest layer and the lowest layer. To solve this problem, we have also developed a technique to lower the height of the cell by 20% in proportion to the number of steps.
Samsung Electronics plans to lead the high capacity trends in supercomputers, enterprise servers and mobile markets to meet the demand of 5G V NAND customers.
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